Not a long after Samsung Galaxy S10 lineup debut, the South-Korean company is coming with another big announcement. This particular one may be important for the smartphone industry as a whole. We are talking about the fact that the first 512GB eUFS 3.0 storage delivering great performance gains that are largely increased over the last generation.
The newer 512GB eUFS 3.0 chips are already in mass performance and outperform the eUFS 2.1 chips. The company’s executive vice President of Memory Sales and Marketing at Samsung Electronics went even further and said that the new standard is finally capable of reaching today’s ultra-slim laptops when it comes to storage performance.
The 512GB eUFS 3.0 memory stacks eight of 5th generation 512-gigabit V-NAND dies while taking advantage of a new high-performance controller. I can reach up to 2,100 MB/s read speeds, which is two times faster than eUFS 2.1 chips. Furthermore, the read speed is about four times faster than conventional SSDs running on the SATA interface. The overall write speeds should be around 410 MB/s – a speed that can be compared with SATA SSDs.
The new chip also shows some performance gains in the IOPS – 63,000 random read IOPS and 68,000 random write IOPS. The results are 630 times faster than a “good” microSD card. In addition to the new 512GB standard, Samsung is also producing a 128GB eUFS 3.0 chip. Furthermore, it should start the manufacture of 256GB and 1TB flavors in the second half of 2019.