Not so long ago, a rumor spread across the network that the release of the Samsung Galaxy S21 FE was forced to be postponed and the delay in its announcement was attributed to the notorious shortage of chips. Therefore, instead of August, the premiere of the flagship was postponed to October and October 7 flashes as the likely release date. But the lack of processors will not be completely overcome, so the Galaxy S21 FE will be available in a limited number of countries. Even South Korea will be left behind the sales region.
To somehow cover the shortage of SoCs, the company will once again return to its favorite and practiced scheme, when it releases two versions of the flagship, with a chip from Qualcomm and SoC Exynos. Those. in the US, the Galaxy S21 FE will be offered with the Snapdragon 888, while Europe will get the Exynos variant. Most likely, the proprietary Exynos 2100 chipset will be installed.
The other day, the Galaxy S21 FE passed the registration procedure with the FCC; and this made it possible to find out that the new product will support 45 W fast charging; but the charging adapter will not be included in the package, it will have to be purchased.
The smartphone should receive a 4500 mAh battery, up to 8 GB of RAM; up to 256 GB of memory and a FullHD + AMOLED display with a 120 Hz refresh rate.
Samsung will master the mass production of 3nm SoCs no earlier than 2024
Samsung initially relied on a transistor channel completely surrounded by gates (GAAFET); in the development of 3 nm technological standards; and at the same time promised to introduce the technology into mass production almost faster than its main competitor, TSMC. Now informed sources report that the appearance of 3-nm serial products in the performance of Samsung will have to wait until 2024.
At the beginning of 2019, according to the SemiAnalysis; Samsung Electronics hoped to implement a 3-nm process technology in the 3GAE variety; by the end of 2020 at the pilot production stage; and by the end of 2021 to move to mass production. Compared to 7nm technology, it was planned to increase the switching speed of transistors by 35%; reduce power consumption by 50%; and the density of the transistors was to increase by 45%. The targets are currently revised downward. For example, the gain in speed has been reduced to 10%; the increase in density has been reduced to 25%; and in terms of energy consumption, progress has deteriorated to 20%.