Samsung UFS 4.0: a new standard for high-speed memory in smartphones


Samsung

Samsung has announced a new flash memory standard, UFS 4.0, which promises a significant performance boost over its predecessor, UFS 3.1. In particular, we are talking about the fact that productivity will double.

Flash 4.0 delivers up to 23.2Gbps per lane, according to Samsung, which is twice the capacity of UFS 3.1. The company says UFS 4.0 bandwidth will be especially useful for 5G smartphones given the large amount of data that will need to be downloaded to the devices. The new memory will also help meet the data demands of augmented and virtual reality applications.

Energy efficiency is another benefit of the new flash memory, with sequential read speeds of 6.0 MB/s per milliamp (mA). And it’s 46% more efficient than what UFS 3.1 offers, meaning users will see an increase in battery life despite better performance.

The compactness of the new flash memory module is also among the achievements. For example, a 512 GB UFS 3.1 module measures 11.5 x 13 x 1.0 mm. Whereas the maximum size of a UFS 4.0 module will be 11 x 13 x 1 mm for 1 TB of storage.

Samsung UFS 4.0: a new standard for high-speed memory in smartphones

Mass production of UFS 4.0 will start in the third quarter of 2022, which means that UFS 4.0 could appear in smartphones at the end of this year or early 2023. Perhaps the UFS 4.0 flash drive will debut in one of Samsung‘s flagships.

The drives in modern smartphones are already very fast, but, of course, they will be even faster. Samsung has developed the industry’s highest performing Universal Flash Storage (UFS) 4.0 storage solution, which has received JEDEC approval.  “Working with smartphone and consumer device manufacturers around the world, we are actively working to build an ecosystem for UFS 4.0 to drive the market for high-performance mobile storage solutions”.

Most importantly, the company revealed the main characteristics. UFS 4.0 offers speeds up to 23.2Gbps per lane, double that of UFS 3.1. As a result, thanks to the improved seventh generation V-NAND memory and proprietary controller, the new memory provides sequential read speeds up to 4200 MB / s, and write speeds can reach 2800 MB / s. This is faster than the SSD in the Xbox Series X, although it falls far short of the drive in the PlayStation 5.

Samsung also talks about improving energy efficiency. The new memory delivers 6MB/s at 1mA, a 46% improvement over UFS 3.1. In addition, the company talks about the compactness of the solution. Chip dimensions will be 11 x 13 x 1 mm, and the capacity will reach 1 TB.

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