As it has been the case for a few years now, Samsung in the coming year is expected to release two hardware variants of its upcoming flagship Galaxy S10 lineup – the Global Exynos variant, the China and U.S only SD SoC variant.
While the leaks continue to pile up, a recent benchmark listing of an Exynos-powered Samsung Galaxy S10+ first obtained by popular Samsung leakster @IceUniverse suggests that Samsung’s next flagship SoC could actually prove to be a bit behind Qualcomm’s equivalent offering.
The speed test benchmark listing allegedly for the Galaxy S10+ has just surfaced on AnTuTu revealing some impressive performance score.
The Samsung device has the SM-G975F model number, which matches the model number so far linked to the Galaxy S10+. It uses Samsung’s own Exynos 9820 chip, coupled with 6GB of RAM, Mali-G76 GPU, with Android Pie onboard. In terms of performance, the Exynos 9820 powered Galaxy S10+ secured a whopping 325,076 points beating the Mate 20 Pro from Huawei and making it the fastest Android phone so far released, but a tad below the leaked 362 ,292 on AnTuTu performance score of Qualcomm’s upcoming Snapdragon 855/8150 platform.
In addition to the latest revelation, indications emerged earlier yesterday that Samsung might also release a Galaxy S10 model with up to 12GB of RAM, and as much as 1TB of storage, and if we go by this, then a Galaxy S10 model with better benchmark score than this should emerge in the days to come.